STMicroelectronics
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SCTW100N65G2AG
Part Number: SCTW100N65G2AG
Manufacturer: STMicroelectronics
Description: Automotive silicon carbide Power MOSFET 650 V, 100 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
Package: HiP247™
In Stock: 497
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number SCTW100N65G2AG
Manufacturer STMicroelectronics
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V
Power Dissipation (Max) 420W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Base Product Number SCTW100

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