Infineon Technologies
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F411MR12W2M1B76BOMA1
Part Number: F411MR12W2M1B76BOMA1
Manufacturer: Infineon Technologies
Description: SIC 4N-CH 1200V AG-EASY1B-2 Mosfet Array 1200V (1.2kV) 100A (Tj) Chassis Mount AG-EASY1B-2
In Stock: 4
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number F411MR12W2M1B76BOMA1
Manufacturer Infineon Technologies
FET Type Silicon Carbide (SiC)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 100A (Tj)
Rds On (Max) @ Id, Vgs 11.3mOhm @ 100A, 15V
Vgs(th) (Max) @ Id 5.55V @ 40mA
Gate Charge (Qg) (Max) @ Vgs 248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-EASY1B-2

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