Taiwan Semiconductor Corporation
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TSM4ND65CI
Part Number: TSM4ND65CI
Manufacturer: Taiwan Semiconductor Corporation
Description: Trans MOSFET N-CH 650V 4A 3-Pin(3+Tab) ITO-220 Tube
In Stock: 1844
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number TSM4ND65CI
Manufacturer Taiwan Semiconductor Corporation
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 596 pF @ 50 V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 41.6W (Tc)
Rds On (Max) @ Id, Vgs 2.6Ohm @ 1.2A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220
Package / Case TO-220-3 Full Pack, Isolated Tab

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