Infineon Technologies
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IPG20N10S4L35ATMA1
Part Number: IPG20N10S4L35ATMA1
Manufacturer: Infineon Technologies
Description: 100V, Dual N-Ch, 35 mΩ max, Automotive MOSFET, dual SS08 (5x6), OptiMOS™-T2, PG-TDSON-8, RoHS
Package: 8-PowerVDFN
In Stock: 53523
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number IPG20N10S4L35ATMA1
Manufacturer Infineon Technologies
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 20A
Rds On (Max) @ Id, Vgs 35 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 2.1V @ 16µA
Gate Charge (Qg) (Max) @ Vgs 17.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1105pF @ 25V
Power - Max 43W
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-4

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