STMicroelectronics
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SCTW40N120G2VAG
Part Number: SCTW40N120G2VAG
Manufacturer: STMicroelectronics
Description: Silicon Carbide MOSFET, Single, N Channel, 33 A, 1.2 kV, 0.075 ohm, TO-247
Package: HiP247™
In Stock: 2639
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number SCTW40N120G2VAG
Manufacturer STMicroelectronics
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V
Power Dissipation (Max) 290W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
Base Product Number SCTW40

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