Infineon Technologies
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FF6MR12KM1BOSA1
Part Number: FF6MR12KM1BOSA1
Manufacturer: Infineon Technologies
Description: Transistor Silicon Carbide MOSFET Array Module Dual N-CH 1200V AG-62MM Tray
In Stock: 120
Unit Price: Request a Quotation
RoHs Status: ROHS Compliant

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Part Number FF6MR12KM1BOSA1
Manufacturer Infineon Technologies
FET Type Silicon Carbide (SiC)
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 250A (Tc)
Rds On (Max) @ Id, Vgs 5.81mOhm @ 250A, 15V
Vgs(th) (Max) @ Id 5.15V @ 80mA
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package AG-62MM

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