Single FETs, MOSFETs
FETs, MOSFETs - Page 152
SCTW35N65G2V
STMicroelectronics
Silicon carbide Power MOSFET 650 V, 45 A, 45 m¶ (typ., TJ = 25 C) in an HiP247 package
Stock: 534
SCTW70N120G2V
STMicroelectronics
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Stock: 5660
SCTWA40N120G2V-4
STMicroelectronics
HiP-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Stock: 4
SCTWA70N120G2V-4
STMicroelectronics
Silicon Carbide MOSFET, Single, N Channel, 91 A, 1.2 kV, 30 Milliohms, HiP247, 4 Pins
Stock: 1158
SCTWA90N65G2V-4
STMicroelectronics
Silicon Carbide MOSFET, Single, N Channel, 119 A, 650 V, 0.018 ohm, HiP247
Stock: 4573
SCT055HU65G3AG
STMicroelectronics
Automotive-grade silicon carbide Power MOSFET, 650V, 30A
Stock: 272
SCT30N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
Stock: 839
SCT10N120
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
Stock: 82
SCT20N120AG
STMicroelectronics
Silicon Carbide MOSFET, Single, N Channel, 20 A, 1.2 kV, 239 Milliohms, HiP247, 3 Pins
Stock: 238
SCTWA30N120
STMicroelectronics
HiP-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
Stock: 409
SCT10N120AG
STMicroelectronics
Silicon Carbide Power MOSFET 1200V 12A 520milliOhm 3-Pin HiP247 Tube
Stock: 370
SCTW90N65G2V
STMicroelectronics
Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package
Stock: 790
SCTH90N65G2V-7
STMicroelectronics
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package
Stock: 2403
SCTH70N120G2V-7
STMicroelectronics
1200 V 21 mOhm 90 A Silicon Carbide Power MOSFET - H²PAK-7
Stock: 969