RF FETs, MOSFETs
FETs, MOSFETs - Page 7
MRFE6S9060NR1
NXP Semiconductors
Single N-CDMA Lateral N-Channel Broadband RF Power MOSFET, 880 MHz, 14 W Avg., 28 V
Stock: 390
A2T18H455W23NR6
NXP USA Inc.
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 87 W Avg., 31.5 V, FM6F, RoHS
Stock: 190
MRF6V2150NBR1
NXP USA Inc.
RF Power Transistor, 10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1735
Stock: 232
PXAC260602FC-V1-R0
CreeLED, Inc.
Telecom, LDMOS, 28 V, 50W, 16 dB, Earless, RoHS
Stock: Check Availability & Quote
BF861A,215
NXP USA Inc.
BF861A Series 25 V 6.5 mA 250 mW Surface Mount N-Channel Junction FETs-SOT-23-3
Stock: 488
MRF6VP121KHR5
NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Stock: 68
BLF8G27LS-100V,118
Ampleon USA Inc.
RF Power Transistor, 2.5 to 2.7 GHz, 100 W, 17 dB, 28 V, SOT1244B, LDMOS
Stock: 1101
MRF8S21100HSR3
NXP USA Inc.
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
Stock: 744
MRF6VP121KHR6
NXP USA Inc.
Lateral N-Channel Broadband RF Power MOSFET, 965-1215 MHz, 1000 W, 50 V
Stock: 174
MRF6VP2600HR5
NXP USA Inc.
RF Power Transistor, 2 to 500 MHz, 600 W, Typ Gain in dB is 25 @ 225 MHz, 50 V, LDMOS, SOT1787
Stock: 191
MRF6VP11KHR5
NXP USA Inc.
Lateral N-Channel Broadband Rf Power Mosfet, 1.8-150 Mhz, 1000 W, 50 V Rohs Compliant: Yes
Stock: 564
MRF6VP41KHR7
NXP USA Inc.
Tape & Reel (TR) LDMOS (Dual) MRF6VP41 ROHS3Compliant RF Mosfet 150mA 1000W 20dB 450MHz
Stock: 183
MRF1535NT1
NXP USA Inc.
Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V
Stock: 2290
MRF13750HR5
NXP Semiconductors
RF Power Transistor, 0.70 to 1.3 GHz, 750 W, Typ Gain indB is 19.5 @ 915 MHz, SOT1787-1, LDMOS
Stock: 64
MRFE6VP6600NR3
NXP Semiconductors
RF Power Transistor, 1.8 to 600 MHz, 600 W, Typ Gain in dB is 24 @ 98 MHz, 50 V, LDMOS, SOT1818
Stock: 159