RF FETs, MOSFETs
FETs, MOSFETs - Page 15
BLF647PS,112
Ampleon
RF Power Transistor, 0 to 1.4 GHz, 200 W, 18 dB, 32 V, LDMOS, SOT1121B
Stock: 67
ATF-54143-TR1
Broadcom Limited
RF Small Signal Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
Stock: Check Availability & Quote
AFT18H357-24SR6
NXP USA Inc.
Airfast Rf Power Ldmos Transistor, 1805-1995 Mhz, 63 W Avg., 28 V
Stock: 150
AFT09MS015NT1
NXP Semiconductors
RF Power Transistor, 0.136 to 0.941 GHz, 16 W, 17.2 dB, 12.5 V, PLD-1.5W, LDMOS
Stock: Check Availability & Quote
AFT05MS031GNR1
NXP Semiconductors
Airfast Wideband RF Power LDMOS Transistor, 136-520 MHz, 31 W, 13.6 V
Stock: 1030
AFT05MS003NT1
NXP USA Inc.
Airfast Wideband Rf Power Ldmos Transistor 1.8-941 Mhz, 3 W, 7.5V Rohs Compliant: Yes
Stock: 10195
A2T07H310-24SR6
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 720-960 MHz, 47 W Avg., 28 V
Stock: 300
BLF6G22L-40BN,118
Ampleon USA Inc.
RF Power Field-Effect Transistor, 2-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Stock: 318
ATF-33143-TR1G
Broadcom Limited
Trans FET N-CH 5.5V 305mA pHEMT 4-Pin(3+Tab) SOT-343 T/R / FET RF 5.5V 2GHZ SOT-343
Stock: 8403
A2I20H060GNR1
NXP Semiconductors
Amplifier, 1800 to 2200 MHz, 63 W, Typ Gain in dB is 28.4 @ 1840 MHz, 28 V, LDMOS, SOT1722
Stock: Check Availability & Quote
A2I25H060NR1
NXP USA Inc.
Amplifier, 2300 to 2690 MHz, 52 W, Typ Gain in dB is 27.5 @ 2590 MHz, 28 V, LDMOS, SOT1730
Stock: 502
