Transistors - FETs, MOSFETs - RF
Discrete Semiconductor - Page 91
MRF8S26060HSR3
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V
Stock: 399
MRF6VP3091NBR5
NXP Semiconductors
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
Stock: 394
MRF8S26060HSR5
NXP Semiconductors
16.3 dB Compliant 2.521492 g 2.69 GHz 15.5 W 450 mA 28 V 3
Stock: 167
MRF6VP3091NR5
NXP Semiconductors
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1736
Stock: 898
MRF8P23160WHR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V
Stock: 303
MRF8P23160WHSR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V
Stock: 223
MRF8P9040NBR1
NXP Semiconductors
CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
Stock: 338
MRF8S18210WGHSR5
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg.,
Stock: 245
MRF8S18210WHSR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg., 30 V
Stock: 279
MRF8S18210WHSR5
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1805 MHz - 1995 MHz, 50 W Avg.,
Stock: 296
MRF8S21100HR3
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
Stock: 396
MRF8S21100HR5
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
Stock: 45
MRF8S21100HSR5
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 24 W Avg., 28 V
Stock: 409
MHT1004NR3
NXP Semiconductors
Rf Power Ldmos Transistor For Consumer And Commercial Cooking, 2450 Mhz, 300 W, 32 V
Stock: 309
MRF8S9202GNR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V
Stock: 874
MRF8S7235NR3
NXP Semiconductors
RF Power Transistor, 728 to 768 MHz, 260 W, Typ Gain in dB is 20 @ 728 MHz, 28 V, LDMOS, SOT1823
Stock: 1571
MMRF2011NT1
NXP Semiconductors
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-960 MHz, 1.6 W Avg., 28 V
Stock: 668