Transistors - FETs, MOSFETs - RF
Discrete Semiconductor - Page 89
MRF7S35120HSR3
NXP Semiconductors
12 dB Compliant Surface Mount 4.763003 g 3.5 GHz Lead Free Halogen Free 120 W
Stock: 150
MRF6V13250HR3
NXP Semiconductors
Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Stock: 247
MRF6V13250HR5
NXP Semiconductors
RF Power Transistor, 960 to 1500 MHz, 250 W, Typ Gain in dB is 22.7 @ 1300 MHz, 50 V, LDMOS, SOT1792
Stock: 146
MRF6V13250HSR3
NXP Semiconductors
Lateral N-Channel RF Power MOSFET, 1300 MHz, 250 W, 50 V
Stock: 255
MRF6V13250HSR5
NXP Semiconductors
RF Power Transistor, 960 to 1500 MHz, 250 W, Typ Gain in dB is 22.7 @ 1300 MHz, 50 V, LDMOS, SOT1793
Stock: 244
MRF8S18120HSR5
NXP Semiconductors
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V, CFM2F, RoHS
Stock: 147
MRF6VP3091NR1
NXP Semiconductors
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1736
Stock: 1200
MRF8S9100HR5
NXP Semiconductors
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V, CFM2F, RoHS
Stock: 156
MRF8HP21080HR3
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V
Stock: 222
MRF8HP21080HR5
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V
Stock: 35
MRF8HP21080HSR3
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 16 W Avg., 28 V
Stock: 352
MRFE6P9220HR3
NXP Semiconductors
Single N-CDMA Lateral N-Channel RF Power MOSFET, 865-900 MHz, 47 W Avg., 28 V
Stock: 682
MRF8HP21130HR3
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
Stock: 274
MRF8HP21130HR5
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
Stock: 104
MRF8HP21130HSR3
NXP Semiconductors
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V
Stock: 1492