Transistors - FETs, MOSFETs - RF
Discrete Semiconductor - Page 47
PXAC260602FC-V1
Wolfspeed, Inc.
High Power RF LDMOS FET 60 W; P3dB @ 28 V; 2620 – 2690 MHz
Stock: Check Availability & Quote
BLA9H0912LS-250U
Ampleon
RF Power, Transistor, 0.96 to 1.215 GHz, 250 W, 22 dB, 50 V, SOT502B, LDMOS
Stock: 141
PXAC261002FC-V1
Wolfspeed, Inc.
High Power RF LDMOS FET 100 W; 28 V; 2490 – 2690 MHz
Stock: Check Availability & Quote
PXAC261212FC-V1
Wolfspeed, Inc.
High Power RF LDMOS FET 120 W; 28 V; 2496 – 2690 MHz
Stock: Check Availability & Quote
BLA9G1011LS-300U
Ampleon
RF Power Transistor, 1.03 to 1.09 GHz, 300 W, 20.5 dB, 32 V, SOT502B, LDMOS
Stock: 243
A2G22S160-01SR3
NXP Semiconductors
AIRFAST RF Power GaN Transistor, 1800-2200 MHz, 32 W AVG., 48 V
Stock: 1771
BLA9G1011L-300U
Ampleon
300 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz
Stock: 310
A2I08H040GNR1
NXP Semiconductors
Amplifier, 728 to 960 MHz, 46.8 W, Typ Gain in dB is 30.7 @ 920 MHz, 28 V, LDMOS, SOT1722
Stock: 2484
A2I08H040NR1
NXP Semiconductors
Amplifier, 728 to 960 MHz, 46.8 W, Typ Gain in dB is 30.7 @ 920 MHz, 28 V, LDMOS, SOT1722
Stock: 260
MMRF1019NR4
NXP Semiconductors
Pulsed Lateral N-Channel RF Power MOSFET, 1090 MHz, 10 W, 50 V
Stock: 62
BLS9G2729L-350U
Ampleon
RF Power Transistor, 2.7 to 2.9 GHz, 350 W, 14 dB, 28 V, SOT502A, LDMOS
Stock: 11
A2T18H160-24SR3
NXP Semiconductors
Airfast RF Power LDMOS Transistor, 1805-1880 MHz, 28 W Avg., 28 V
Stock: 448
BLS9G2729LS-350U
Ampleon
RF Power Transistor, 2.7 to 2.9 GHz, 350 W, 14 dB, 28 V, SOT502B, LDMOS
Stock: 449
A2T18H450W19SR6
NXP Semiconductors
Airfast RF Power LDMOS Transistor 1805-1880 MHz, 89 W Avg., 30 V, CFM8F, RoHS
Stock: 348
BLA9H0912L-250U
Ampleon
RF Power, Transistor, 0.96 to 1.215 GHz, 250 W, 22 dB, 50 V, SOT502A, LDMOS
Stock: 308
A2T18S160W31SR3
NXP Semiconductors
Airfast RF Power LDMOS Transistor 1805-1995 MHz, 32 W Avg., 28 V, CFM4F, RoHS
Stock: 310