Transistors - FETs, MOSFETs - RF
Discrete Semiconductor - Page 43
MMRF1308HSR5
NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Stock: 258
BLF8G09LS-400PWU
Ampleon
RF Power Transistor, 0.716 to 0.96 GHz, 400 W 20.6 dB, 28 V, LDMOS, SOT1242B
Stock: 156
PXFC192207FH-V3-R250
Wolfspeed, Inc.
Telecom, LDMOS, 28 V, 220W, 20.5 dB, Earless, RoHS
Stock: Check Availability & Quote
BLM8D1822S-50PBGY
Ampleon
Amplifier, MMIC, 1.805 to 2.170 GHz, 50 W, 26 dB, 28 V, SOT1212-2, LDMOS
Stock: 366
MMRF1318NR1
NXP Semiconductors
RF Power Transistor, 10 to 600 MHz, 300 W, Typ Gain in dB is 22 @ 450 MHz, 50 V, LDMOS, SOT1736
Stock: 1786
MMRF2005NR1
NXP Semiconductors
Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 728-768 MHz, 920-960 MHz, 3.2 W, 28 V
Stock: 3187
BLC9G22XS-400AVTZ
Ampleon
RF Power Transistor, 2.11 to 2.2 GHz, 400 W, 15.3 dB, 32 V, SOT1258-7, LDMOS
Stock: 124
MRF101AN-START
NXP Semiconductors
Essentials Kit for MRF101AN Wideband RF Power LDMOS Transistors
Stock: 220
MMRF2007NR1
NXP Semiconductors
RF LDMOS Wideband Integrated Power Amplifier, 850-940 MHz, 35 W Avg., 28 V
Stock: 1368
BLF8G22LS-270GV,12
Ampleon
RF Power Transistor, 2.11 to 2.17 GHz, 270 W, 17.7 dB, 28 V, SOT1244C, LDMOS
Stock: 150
MMRF2004NBR1
NXP Semiconductors
Amplifier, 2500 to 2700 MHz, 25 W, Typ Gain in dB is 28.5 @ 2700 MHz, 28 V, LDMOS, SOT1727
Stock: 1320
MMRF1021NT1
NXP Semiconductors
Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
Stock: 343
PTFB072707FH-V1-R250
Wolfspeed, Inc.
Telecom, LDMOS, 28 V, 320W, 18.5 dB, Earless, RoHS
Stock: Check Availability & Quote
BLF8G22LS-270U
Ampleon
RF Power Transistor, 2.11 to 2.17 GHz, 270 W, 17.7 dB, 28 V, SOT502B, LDMOS
Stock: 95
A2T21H141W24SR3
NXP Semiconductors
Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 36 W Avg., 28 V RoHS Compliant: Yes
Stock: 377