Transistors - FETs, MOSFETs - RF
Discrete Semiconductor - Page 110
MRF8S8260HR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 850-895 MHz, 70 W Avg., 28 V
Stock: 212
MRF8S9260HR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V
Stock: 204
MRF8S9260HR5
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V, CFM2F, RoHS
Stock: 360
MRFE6VP5600HSR6
NXP Semiconductors
Lateral N-Channel Broadband RF Power MOSFET, 1.8-600 MHz, 600 W CW, 50 V
Stock: 131
MRF8P20160HR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 1880-2025 MHz, 37 W Avg., 28 V
Stock: 360
MRF8P20160HSR5
NXP Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Stock: 399
MRF8S26060HR5
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V
Stock: 382
MRF6VP121KHSR5
NXP Semiconductors
RF Power Transistor, 965 to 1215 MHz, 1000 W, Typ Gain in dB is 20 @ 1030 MHz, 50 V, LDMOS, SOT1829
Stock: 114
MRF8S26060HSR3
NXP Semiconductors
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2620-2690 MHz, 15.5 W Avg., 28 V
Stock: 399
MRF6VP3091NBR5
NXP Semiconductors
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
Stock: 394
MRF8S26060HSR5
NXP Semiconductors
16.3 dB Compliant 2.521492 g 2.69 GHz 15.5 W 450 mA 28 V 3
Stock: 167
MRF6VP3091NR5
NXP Semiconductors
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1736
Stock: 898
MRF8P23160WHR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V
Stock: 303
MRF8P23160WHSR3
NXP Semiconductors
Single W-CDMA Lateral N-Channel RF Power MOSFET, 2300-2400 MHz, 30 W Avg., 28 V
Stock: 223
MRF8P9040NBR1
NXP Semiconductors
CDMA, W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 728-960 MHz, 4.0 W Avg., 28 V
Stock: 338