Transistors
Discrete Semiconductor Products - Page 400
AO3422L
Alpha & Omega Semiconductor Inc.
N-Channel Enhancement Mode Field Effect Transistor | MOSFET N-CH 55V SOT23
Stock: 3254
ALD1106SBL
Advanced Linear Devices Inc.
Precision Matched Small Signal MOSFET Arrays Quad N-Channel Array
Stock: 708
AIKW20N60CTXKSA1
Infineon Technologies
IC DISCRETE 600V TO247-3 IGBT Trench Field Stop 600 V 40 A 166 W Through Hole PG-TO247-3-41
Stock: 4915
AIKQ120N60CTXKSA1
Infineon Technologies
Igbt, Aec-Q101, 600V, 160A, 833W, To-247 Rohs Compliant: Yes |Infineon AIKQ120N60CTXKSA1
Stock: 242
AIGW50N65F5XKSA1
Infineon Technologies
IGBT 650V TO247-3 IGBT Trench 650 V 270 W Through Hole PG-TO247-3-41
Stock: 98
AFT26HW050SR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 9 W Avg., 28 V
Stock: 1931
AFT26H250-24SR6
NXP USA Inc.
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Stock: 769
AFT23S160W02SR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Stock: 374
AFT23S160W02GSR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Stock: 395
AFT23H200-4S2LR6
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Stock: 9036
AFT21S230SR3
NXP USA Inc.
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Stock: 3221
AFT20S015NR1
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Stock: 1571
AFT20S015GNR1
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1805-2690 MHz 1.5 W Avg., 28 V
Stock: 644
AFT20P140-4WNR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1880-2025 MHz, 24 W Avg., 28 V, FM4F, RoHS
Stock: 14020
AFT20P060-4NR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1805-2170 MHz 6.3 W Avg., 28 V, FM4F, RoHS
Stock: 11865
AFT20P060-4GNR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1805-2170 MHz 6.3 W Avg., 28 V
Stock: 375
AFT18S290-13SR3
NXP USA Inc.
Airfast RF Power LDMOS Transistor, 1805-1995 MHz 63 W Avg., 28 V
Stock: 1