Transistors
Discrete Semiconductor Products - Page 311
MRF6VP41KHSR5
NXP USA Inc.
Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V
Stock: 150
MRF6VP3450HR6
NXP USA Inc.
Lateral N-Channel Broadband RF Power MOSFET, 860 MHz, 450 W, 50 V
Stock: 156
MRF6VP2600HR6
NXP USA Inc.
Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V, CFM4F, RoHS
Stock: 508
MRF6V3090NR1
NXP USA Inc.
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1736
Stock: 50
MRF6V3090NBR5
NXP USA Inc.
Tape & Reel (TR) N-CHANNEL SINGLE ESD PROTECTION RF Mosfet 350mA 18W 22dB 860MHz
Stock: 143
MRF6V3090NBR1
NXP USA Inc.
RF Power Transistor, 470 to 1215 MHz, 90 W, Typ Gain in dB is 22 @ 860 MHz, 50 V, LDMOS, SOT1735
Stock: 146
MRF6V2150NR1
NXP USA Inc.
RF Power Transistor, 10 to 450 MHz, 150 W, Typ Gain in dB is 25 @ 220 MHz, 50 V, LDMOS, SOT1736
Stock: 194
MRF6V2010NR1
NXP USA Inc.
RF Power Transistor, 10 to 450 MHz, 10 W, Typ Gain in dB is 23.9 @ 220 MHz, 50 V, LDMOS, SOT1732
Stock: 4633
MRF6V12500HR5
NXP USA Inc.
RF Power Transistor, 960 to 1215 MHz, 500 W, Typ Gain in dB is 19.7 @ 1030 MHz, 50 V, LDMOS, SOT1792
Stock: 110
MRF6V10010NR4
NXP USA Inc.
RF Power Transistor, 960 to 1400 MHz, 10 W, Typ Gain in dB is 25 @ 1090 MHz, 50 V, LDMOS, SOT1811
Stock: 144
MRF6S27050HSR3
NXP USA Inc.
Transistor RF FET N-CH 68V 2500MHz to 2700MHz 3-Pin NI-780S T/R
Stock: 360
MRF6S23100HSR3
NXP USA Inc.
Transistor RF FET N-CH 68V 2300MHz to 2400MHz 3-Pin NI-780S T/R
Stock: 34
MRF6S21140HR3
NXP USA Inc.
2 x W-CDMA, Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 30 W Avg., 28 V
Stock: 665
MRF6S20010NR1
NXP USA Inc.
RF Power Transistor, 1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1732
Stock: 1139
MRF6S20010GNR1
NXP USA Inc.
RF Power Transistor, 1600 to 2200 MHz, 10 W, Typ Gain in dB is 15.5 @ 2170 MHz, 28 V, LDMOS, SOT1731
Stock: 364
MRF6S19140HR3
Freescale Semiconductor
Transistors RF MOSFET Power HV6 28V 29W LDMOS NI880H
Stock: 371