Transistors
Discrete Semiconductor Products - Page 308
MRFG35010
NXP USA Inc.
S Band, Gaas, N-channel, Rf Power, Hemfet, Rohs Compliant, NI-360HF, Case 360D-02, 2 Pin
Stock: 4100
MRFE6VS25NR1
NXP USA Inc.
RF Power Transistor, 1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.5 @ 512 MHz, 50 V, LDMOS, SOT1732
Stock: Check Availability & Quote
MRFE6VS25LR5
NXP USA Inc.
RF Power Transistor, 1.8 to 2000 MHz, 25 W, Typ Gain in dB is 25.9 @ 512 MHz, 50 V, LDMOS, SOT1791
Stock: Check Availability & Quote
MRFE6VS25GNR1
NXP USA Inc.
MRFE6VS Series 133 V 512 MHz RF Power LDMOS Transistor - TO-270-2 GULL
Stock: Check Availability & Quote
MRFE6VP8600HR5
NXP USA Inc.
RF Power Transistor, 470 to 860 MHz, 600 W, Typ Gain in dB is 19.3 @ 860 MHz, 50 V, LDMOS, SOT1787
Stock: 448
MRFE6VP6300HR5
NXP USA Inc.
RF Power Transistor, 1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Stock: 37
MRFE6VP6300HR3
NXP USA Inc.
RF Power Transistor, 1.8 to 600 MHz, 300 W, Typ Gain in dB is 25 @ 130 MHz, 50 V, LDMOS, SOT1827
Stock: 675
MRFE6VP5600HR5
NXP USA Inc.
RF Power Transistor, 1.8 to 600 MHz, 600 W, Typ Gain in dB is 24.6 @ 230 MHz, 50 V, LDMOS, SOT1787
Stock: 50
MRFE6VP5150NR1
NXP USA Inc.
WIDEBAND RF POWER LDMOS TRANSISTORS, 1.8--600 MHz, 150 W CW, 50 V /REEL RoHS Compliant: Yes
Stock: 409
MRFE6S9160HSR3
NXP USA Inc.
RF Power Transistor, 865 to 960 MHz, 160 W, Typ Gain in dB is 21 @ 880 MHz, 28 V, LDMOS, SOT1793
Stock: 608
MRFE6S9125NR1
NXP USA Inc.
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Stock: Check Availability & Quote
MRFE6S9125NBR1
NXP USA Inc.
Single N-CDMA, GSM EDGE Lateral N-Channel RF Power MOSFET, 800 MHz, 27 W Avg., 28 V
Stock: 371
MRFE6S9046GNR1
NXP USA Inc.
GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 35.5 W CW, 28 V
Stock: 289