Nexperia's PESD5V0F1BSF is designed for the protection of one data or signal line from surge pulses and ESD damage. The device is suitable on lines where the signal polarities are both, positive and negative with respect to ground. It provides protection against surges with up to 28 W per line.
1.General description
Extremely low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a DSN0603-2 (SOD962) leadless ultra small Surface-Mounted Device (SMD) package designed to protect one signal line from the damage caused by ESD and other transients.
2.Features and benefits
• Bidirectional ESD protection of one line
• Extremely low diode capacitance Cd = 0.25 pF
• Minimized capacitance variation over voltage
• ESD protection up to ±10 kV according to IEC 61000-4-2
• Ultra small SMD package
3. Applications
• Cellular handsets and accessories
• Portable electronics
• Communication systems
• Computers and peripherals
Quick reference data
Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
VRWM | reverse standoff voltage | Tamb = 25 °C | - | - | 5 | V | |
Cd | diode capacitance | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 0.2 | 0.25 | 0.3 | pF |
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol | Parameter | Conditions | Min | Max | Unit | |
PPPM | rated peak pulse power | tp = 8/20 µs | [1] | - | 28 | W |
IPPM | rated peak pulse current | [1] | - | 2.2 | A | |
Tj | junction temperature | - | 150 | °C | ||
Tamb | ambient temperature | -55 | 150 | °C | ||
Tstg | storage temperature | -65 | 150 | °C | ||
ESD maximum ratings | ||||||
VESD | electrostatic discharge voltage | IEC 61000-4-2 (contact discharge) | [2] | - | 10 | kV |
IEC 61000-4-2 (air discharge) | [2] | - | 10 | kV | ||
MIL-STD-883 (human body model) | - | 10 | kV | |||
[1] Non-repetitive current pulse 8/20 μs exponentially decaying waveform according to IEC 61000-4-5
[2] Device stressed with ten non-repetitve ESD pulses.
Characteristics
Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
VRWM | reverse standoff voltage | Tamb = 25 °C | - | - | 5 | V | |
VBR | breakdown voltage | IR = 1 mA; Tamb = 25 °C | 6 | - | 10 | V | |
IRM | reverse leakage current | VRWM = 5 V; Tamb = 25 °C | - | 1 | 100 | nA | |
Cd | diode capacitance | f = 1 MHz; VR = 0 V; Tamb = 25 °C | 0.2 | 0.25 | 0.3 | pF | |
VCL | clamping voltage | IPP = 0.5 A; Tamb = 25 °C | [1] | - | - | 10 | V |
IPPM = 2.2 A; Tamb = 25 °C | [1] | - | - | 12.8 | V | ||
Rdyn | dynamic resistance | IR = 10 A; Tamb = 25 °C | [2] | - | 1.3 | - | Ω |
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANS/IESD STM5.5.1-2008
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge
transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias
Newyang is a reliable distributor of electronic components, specializing in hot-sale products and End-of-Life (EOL) inventory. We provide high-quality, reliable electronic components to customers worldwide, with a particular focus on hard-to-find and scarce parts.Whether you are a manufacturer, repair center, or individual developer, we offer the precise components you need to ensure the smooth progress of your projects.